Title :
Low noise HEMTs with multi-feed gate configurations
Author :
Hosogi, K. ; Katoh, T. ; Kashiwa, T. ; Matsuoka, H. ; Minami, H. ; Kosaki, K. ; Nagahama, K. ; Nishitani, K. ; Otsubo, M.
Author_Institution :
Mitsubishi Electr. Corp., Itami, Japan
Abstract :
A novel multifeed gate configuration using air-bridge metallization is demonstrated for low-noise high electron mobility transistors (HEMTs). The configuration is designed according to the detailed analysis of parasitic gate capacitances. Very low noise figures of 0.55 and 1.6 dB have been achieved at 12 and 40 GHz for 0.25 mu m gate AlGaAs/InGaAs pseudomorphic HEMT respectively. A noise figure of 4.1 dB and a gain of 12.2 dB at 40 GHz were obtained for two-stage HEMT monolithic microwave integrated circuits.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; electron device noise; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; metallisation; microwave amplifiers; solid-state microwave devices; 0.25 micron; 0.55 to 4.1 dB; 12 GHz; 12.2 dB; 40 GHz; AlGaAs-InGaAs; EHF; MMIC; Q-band; SHF; air-bridge metallization; gain; high electron mobility transistors; low noise HEMTs; monolithic microwave integrated circuits; multi-feed gate configurations; multifeed gate configuration; noise figures; parasitic gate capacitances; pseudomorphic HEMT; semiconductors; two-stage amplifiers; Gain; HEMTs; Indium gallium arsenide; Integrated circuit noise; MODFETs; Metallization; Microwave integrated circuits; Noise figure; PHEMTs; Parasitic capacitance;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.147256
