Title :
A Si wide-band MMIC amplifier family for L-S band consumer product applications
Author :
Takeuchi, H. ; Muraoka, M. ; Hatakeyama, T. ; Matsuoka, A. ; Honjou, M. ; Miyazaki, S. ; Tanaka, K. ; Nakata, T.
Abstract :
By using Si bipolar process technology, medium-power, low-noise and low-power-consumption amplifiers have been successfully realized. For the low-power-consumption amplifier, as little as 4 mA of total supply current is required with 3.4 V supply voltage, 2.3 GHz 3 dB bandwidth and 10.8 dB gain at 1 GHz.<>
Keywords :
MMIC; bipolar integrated circuits; electronics industry; elemental semiconductors; microwave amplifiers; passivation; silicon; silicon compounds; wideband amplifiers; 10.8 dB; 2.3 GHz; 3.4 V; 4 mA; L-band; MMIC amplifier family; S-band; Si bipolar process technology; circuit diagram; consumer product applications; gain; low noise amplifiers; low-power-consumption amplifiers; medium power amplifiers; semiconductors; supply current; supply voltage; wideband amplifiers; Broadband amplifiers; Circuits; Consumer products; Energy consumption; Low-noise amplifiers; MMICs; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.147257
