Title :
20 GHz 5 dB gain analog multipliers with AlGaAs/GaAs HBTs
Author :
Osafune, Kazuo ; Yamauchi, Yoshiki
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
Abstract :
DC-to-above-20 GHz monolithic Gilbert Cell analog multipliers have been developed using AlGaAs/GaAs heterojunction bipolar transistor (HBT) technology. As a double balance active mixer, it exhibits very high conversion gain of above +5 dB with extremely high local oscillator-intermediate frequency (LO-IF) isolation of 33 dB for Rf/LO inputs up to 20 GHz. As a detection mixer in coherent optical heterodyne receivers, it can operate for RF/Lo inputs up to 15 GHz under a less than -7.5 dBm LO input condition.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; linear integrated circuits; mixers (circuits); multiplying circuits; 0 to 20 GHz; 20 GHz; 33 dB; 5 dB; AlGaAs-GaAs; LO-IF isolation; coherent optical heterodyne receivers; detection mixer; double balance active mixer; heterojunction bipolar transistor; high conversion gain; high local oscillator-intermediate; local oscillator intermediate frequency isolation; monolithic Gilbert Cell analog multipliers; semiconductors; Frequency conversion; Gain; Gallium arsenide; Heterojunction bipolar transistors; Isolation technology; Mixers; Optical frequency conversion; Optical mixing; Optical receivers; Ultraviolet sources;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.147258
