Eight watt Ku-band module

Author

Gat, M. ; Day, D.S. ; Basset, J.R.

Author_Institution

Avantek Inc., Santa Clara, CA, USA

fYear

1991

fDate

10-14 July 1991

Firstpage

1299

Abstract

A Ku-band molecular beam epitaxy (MBE) monolithic power amplifier is reported. In the design, two pairs of monolithic microwave integrated circuits (MMICs) combined in parallel are balanced between Lange couplers and given by a fifth identical MMIC. Each MMIC is a two-stage power amplifier which incorporates a full interstage matching network and a partial input matching network. Individually, the MMICs deliver more than 3 W of power, 11 dB gain, and more than 20% power-added efficiency (PAE) from 15 to 18 GHz. The full power module has 8 W of P/sub out/, 20 dB gain, and 14% PAE at 18 GHz. The module could be tuned for a 1-GHz instantaneous bandwidth anywhere in the 15-18 GHz band.<>

Keywords

MMIC; field effect integrated circuits; microwave amplifiers; modules; power amplifiers; 1 GHz; 11 dB; 14 percent; 15 to 18 GHz; 20 dB; 20 percent; 3 W; 8 W; FET circuit; Ku-band module; Lange couplers; MBE; MMIC; input matching network; interstage matching network; molecular beam epitaxy; monolithic microwave integrated circuits; monolithic power amplifier; two-stage amplifiers; Bandwidth; Couplers; Gain; Impedance matching; MMICs; Microwave integrated circuits; Molecular beam epitaxial growth; Monolithic integrated circuits; Multichip modules; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147262

Filename

147262