DocumentCode
3551767
Title
Microwave germanium transistor
Author
Davis, R.E. ; Bittmann, C.A. ; Gnaedinger, R.J.
Author_Institution
Bell Telephone Laboratories, Inc., Murray Hill, New Jersey
Volume
5
fYear
1959
fDate
1959
Firstpage
46
Lastpage
46
Abstract
A diffused base, alloyed emitter, mesa, PNP germanium transistor has been developed for application as an oscillator or amplifier at 3 kmc, or for use in feedback amplifiers requiring 500 mc bandwidth. The transistor employs a base width of 1/4 micron and a mesa size of 
. The emitter and two base stripes are each 
. The transistor employs a coaxial encapsulation designed to electrically match 50Ω coaxial line. The .0003" thick wafer is gold bonded to the inner conductor of the output line section. The emitter stripe is connected to an internal shield integral with the encapsulation shell by means of a compression bonded .0002" gold wire. The base stripes are connected to the center conductor of the input line by a similar .0002" gold wire. The input and output impedances of the transistor are designed to match 50Ω. Electrical results will be discussed.
. The emitter and two base stripes are each . The transistor employs a coaxial encapsulation designed to electrically match 50Ω coaxial line. The .0003" thick wafer is gold bonded to the inner conductor of the output line section. The emitter stripe is connected to an internal shield integral with the encapsulation shell by means of a compression bonded .0002" gold wire. The base stripes are connected to the center conductor of the input line by a similar .0002" gold wire. The input and output impedances of the transistor are designed to match 50Ω. Electrical results will be discussed.Keywords
Coaxial components; Conductors; Encapsulation; Feedback amplifiers; Germanium alloys; Gold; Microwave oscillators; Microwave transistors; Wafer bonding; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1959 International
Type
conf
DOI
10.1109/IEDM.1959.187117
Filename
1472656
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