Ultrafast electron and hole trapping times and defect band saturation dynamics in low-temperature-grown GaAs

Author

Sung, C.Y. ; Wang, Hai H. ; Norris, Theodore B. ; Whitaker, J.F.

Author_Institution

Ultrafast Sci. Lab., Michigan Univ., Ann Arbor, MI, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

454

Abstract

Summary form only given. Low-temperature-grown GaAs (LT-GaAs) has long been known to have a (sub)picosecond photo-excited carrier response time. In this paper we report the first direct measurement of the hole trapping time from the valence band in LT-GaAs, and distinguish it from electron trapping time from the conduction band and recombination time. These results are compared with trapping and recombination times in conventional semi-insulating GaAs. We have also performed novel experiments at very high optical excitation densities (10/sup 19-20/ carriers/cm/sup 3/) to time resolve the saturation dynamics of mid-gap states.

Keywords

III-V semiconductors; defect states; electron traps; electron-hole recombination; gallium arsenide; high-speed optical techniques; hole traps; GaAs; conduction band; defect band saturation dynamics; electron trapping; hole trapping; low-temperature-grown GaAs; mid-gap states; optical excitation; picosecond photoexcited carrier response time; ultrafast recombination; valence band; Annealing; Charge carrier processes; Computer aided analysis; Electron traps; Gallium arsenide; Probes; Pulse generation; Spontaneous emission; Time measurement; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864916