DocumentCode
3551827
Title
Development of high quality InP bulk crystals
Author
Oda, O. ; Kainosho, K. ; Kohiro, K. ; Hirano, R. ; Shimakura, H. ; Inoue, T. ; Yamamoto, H. ; Fukui, T.
Author_Institution
Nippon Min. Co. Ltd., Saitama, Japan
fYear
1991
fDate
8-11 Apr 1991
Firstpage
2
Lastpage
7
Abstract
Developments in the fields of purification, reduction of dislocation densities, and polishing of InP are reviewed. The possibility of undoped semi-insulating InP is discussed on the basis of recent experimental results. The authors conclude that InP is becoming an indispensable material for long-wave-length optoelectronic and high-frequency devices
Keywords
III-V semiconductors; crystal growth; crystal purification; dislocation density; indium compounds; polishing; reviews; semiconductor growth; III-V semiconductors; dislocation densities; high quality InP bulk crystals; polishing; purification; semi-insulating; wafer processing; Boats; Crystalline materials; Crystals; Frequency; Impurities; Indium phosphide; Iron; Purification; Semiconductor materials; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location
Cardiff
Print_ISBN
0-87942-626-8
Type
conf
DOI
10.1109/ICIPRM.1991.147282
Filename
147282
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