Title :
Development of high quality InP bulk crystals
Author :
Oda, O. ; Kainosho, K. ; Kohiro, K. ; Hirano, R. ; Shimakura, H. ; Inoue, T. ; Yamamoto, H. ; Fukui, T.
Author_Institution :
Nippon Min. Co. Ltd., Saitama, Japan
Abstract :
Developments in the fields of purification, reduction of dislocation densities, and polishing of InP are reviewed. The possibility of undoped semi-insulating InP is discussed on the basis of recent experimental results. The authors conclude that InP is becoming an indispensable material for long-wave-length optoelectronic and high-frequency devices
Keywords :
III-V semiconductors; crystal growth; crystal purification; dislocation density; indium compounds; polishing; reviews; semiconductor growth; III-V semiconductors; dislocation densities; high quality InP bulk crystals; polishing; purification; semi-insulating; wafer processing; Boats; Crystalline materials; Crystals; Frequency; Impurities; Indium phosphide; Iron; Purification; Semiconductor materials; Silicon;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147282
