• DocumentCode
    3551863
  • Title

    Techniques for fabrication of germanium and gallium-arsenide tunnel diodes

  • Author

    Conley, J.W.

  • Author_Institution
    Philco Corporation, Lansdale, Pa.
  • Volume
    6
  • fYear
    1960
  • fDate
    1960
  • Firstpage
    76
  • Lastpage
    76
  • Abstract
    A technique for fabricating tunnel diodes in both germanium and gallium-arsenide will be presented. Material preparation, alloying, mounting, and etching will be considered in detail. Germanium tunnel diodes with Ip/Ivratio greater than 10 and Ip/C merit factor greater than 5ma/pf, and gallium-arsenide tunnel diodes with Ip/Iv, ratio greater than 40 and Ip/C merit factor greater than 10ma/pf will be considered. Temperature dependence of Ipand Iv, with methods used to stabilize these parameters will be discussed.
  • Keywords
    Alloying; Circuits; Diodes; Encapsulation; Etching; Fabrication; Gallium arsenide; Germanium; Materials preparation; Microwave devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1960 Internationa
  • Type

    conf

  • DOI
    10.1109/IEDM.1960.187197
  • Filename
    1472852
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3551863