Title :
Small-scale production of 4-cm2 ITO/InP photovoltaic solar cells
Author :
Gessert, T.A. ; Li, X. ; Coutts, T.J. ; Phelps, P.W. ; Tzafaras, N.
Author_Institution :
Solar Energy Res. Inst., Golden, CO, USA
Abstract :
The procedures and results of a project that produced large-area (4-cm2) cells using the sputtering process used to form small-area indium tin oxide (ITO)/InP solar cells are described. Although only a small number of the 4-cm2 ITO/InP cells (approximately 10 cells total) were fabricated, the efficiency of the best cell compares favorably with the best result reported from a larger production of ~1300 2-cm2 cells in which the junction was fabricated through a closed-ampoule diffusion process. The average cell efficiency is determined to be 15.5%, with a standard deviation of 0.35%. The highest cell performance obtained is 16.1% AM0 (SERI measurement). Preliminary dark I-V data analysis indicates that the cells demonstrate near-ideal characteristics, with a diode-ideality factor and reverse-saturation current density of 1.02 and 1.1 ×10-12 mAcm-2, respectively
Keywords :
III-V semiconductors; indium compounds; semiconductor growth; semiconductor thin films; solar cells; sputter deposition; tin compounds; 15.5 percent; 16.1 percent; III-V semiconductor; ITO-InP solar cells; InSnO-InP; dark I-V data analysis; diode-ideality factor; efficiency; large-area cells; near-ideal characteristics; performance; photovoltaic solar cells; reverse-saturation current density; small scale production; sputtering process; Etching; Indium phosphide; Indium tin oxide; Metallization; Photovoltaic cells; Photovoltaic systems; Plasma applications; Plasma measurements; Production; Solar power generation;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147287
