Title :
Two-terminal monolithic InP/InGaAsP tandem solar cells with tunneling intercell ohmic connections
Author :
Shen, C.C. ; Chang, P.T. ; Emory, K.A.
Author_Institution :
Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA
Abstract :
The structure, epitaxial growth, and fabrication of a InP-based two-terminal monolithic tandem solar cell are described. The tandem solar cell consists of a p/n InP upper cell and a 0.95 eV p/n InGaAsP lower cell. A InGaAsP tunnel junction acts as the intercell ohmic contacts for the series connection of the two subcells. Evaluation results showing conversion efficiency as high as 14.8% obtained under 1 sun global AM 1.5 conditions are presented
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; liquid phase epitaxial growth; ohmic contacts; semiconductor epitaxial layers; semiconductor growth; solar cells; tunnelling; 14.8 percent; III-V semiconductors; InGaAsP tunnel junction; InP-InGaAsP tandem solar cells; LPE; conversion efficiency; epitaxial growth; fabrication; structure; tunneling intercell ohmic connections; two-terminal monolithic tandem solar cell; Coatings; Doping; Epitaxial layers; Etching; Indium gallium arsenide; Indium phosphide; Microwave integrated circuits; Photovoltaic cells; Solid state circuits; Tunneling;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147288
