Contribution to the growth of InP and InGaAsP optoelectronic device materials by atmospheric- and low-pressure MOVPE using tertiarybutylphosphine

Author

Ougazzaden, A. ; Mellet, R. ; Gao, Y. ; Rao, E.V.K. ; Mircea, A.

Author_Institution

CNET, Bagneux, France

fYear

1991

fDate

8-11 Apr 1991

Firstpage

64

Lastpage

67

Abstract

The realization of 1.3-μm laser devices with active light-emitting layers grown from the alternative phosphorous precursor tertiary butylphosphine (TBP) instead of phosphine is discussed. In addition to better safety, an advantage of TBP is easier achievement of high composition uniformity due to a smaller influence of the growth temperature. The main drawback of TBP is its price, which is much higher than for phosphine

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 micron; III-V semiconductors; InGaAsP; InP; MOVPE; atmosphere pressure; buried heterostructure lasers; growth temperature; high composition uniformity; low-pressure; optoelectronic device materials; tertiarybutylphosphine; Chemicals; Electrons; Epitaxial growth; Epitaxial layers; Indium phosphide; Measurement standards; Optoelectronic devices; Photoluminescence; Surface morphology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147294

Filename

147294