Title :
Contribution to the growth of InP and InGaAsP optoelectronic device materials by atmospheric- and low-pressure MOVPE using tertiarybutylphosphine
Author :
Ougazzaden, A. ; Mellet, R. ; Gao, Y. ; Rao, E.V.K. ; Mircea, A.
Author_Institution :
CNET, Bagneux, France
Abstract :
The realization of 1.3-μm laser devices with active light-emitting layers grown from the alternative phosphorous precursor tertiary butylphosphine (TBP) instead of phosphine is discussed. In addition to better safety, an advantage of TBP is easier achievement of high composition uniformity due to a smaller influence of the growth temperature. The main drawback of TBP is its price, which is much higher than for phosphine
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 micron; III-V semiconductors; InGaAsP; InP; MOVPE; atmosphere pressure; buried heterostructure lasers; growth temperature; high composition uniformity; low-pressure; optoelectronic device materials; tertiarybutylphosphine; Chemicals; Electrons; Epitaxial growth; Epitaxial layers; Indium phosphide; Measurement standards; Optoelectronic devices; Photoluminescence; Surface morphology; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147294
