• DocumentCode
    3551883
  • Title

    Substrate orientation and growth temperature dependence of PL lifetimes in Ga0.52In0.48P

  • Author

    DeLong, M.C. ; Ohlsen, W.D. ; Taylor, P.C. ; Olson, J.M.

  • Author_Institution
    Dept. of Phys., Utah Univ., Salt Lake City, UT, USA
  • fYear
    1991
  • fDate
    8-11 Apr 1991
  • Firstpage
    68
  • Lastpage
    71
  • Abstract
    The lifetime of a photoluminescence (PL) emission in small bandgap Ga0.52In0.48P whose energy and lifetime depend strongly on excitation intensity is determined as a function of direction of substrate misorientation off (001) and growth temperature. The frequency and time dependence of the PL emission are discussed
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor epitaxial layers; vapour phase epitaxial growth; Ga0.52In0.48P; III-V semiconductor; OMVPE; excitation intensity; frequency dependence; growth temperature dependence; lifetime; photoluminescence; small bandgap; substrate misorientation; time dependence; Digital audio players; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1991., Third International Conference.
  • Conference_Location
    Cardiff
  • Print_ISBN
    0-87942-626-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1991.147295
  • Filename
    147295
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3551883