Title :
Selective growth of InP in the low pressure hydride VPE system
Author :
Beccard, R. ; Dehe, A. ; Heime, K. ; Laube, G. ; Speier, P.
Author_Institution :
Inst. fur Halbleitertech., Aachen, Germany
Abstract :
The selective growth in a low-pressure vapor phase epitaxy (LP-VPE) system is discussed. It is shown that selectivity is high in a wide range of deposition temperatures. The shape of the selectively grown structures is determined by growth kinetics. Only at high temperatures do mass transport effects have an increased influence. The influence of the width of the mask openings on the growth rate is low
Keywords :
III-V semiconductors; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; III-V semiconductor; InP epilayers; deposition temperatures; growth kinetics; low pressure hydride VPE system; mask openings; mass transport effects; selective growth; Epitaxial growth; Indium phosphide; Kinetic theory; Shape measurement; Size measurement; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147301
