Title :
Photoluminescence investigation of InGaAs-InGaAsP multiquantum wells for laser devices
Author :
Rao, E.V.K. ; Ougazzaden, A. ; Gao, Y. ; Thibierge, H. ; Pougnet, A.M. ; Mircea, A. ; Lugagne-Delpond, E. ; Voisin, P.
Author_Institution :
CNET, Bagneux, France
Abstract :
The photoluminescence (PL) properties of InGaAs-InGaAsP multiquantum well (MQW) structures for laser devices emitting in the ~1.55 μm wavelength region are discussed. Different PL techniques, such as spectral analysis for studying interface quality, spatially and spectrally resolved cartography measurements for recording peak intensity distributions, and large-area topography for defect detection, have been applied to monitor the properties of as-grown and processed structures. After establishing the good quality of the as-grown structures, it is shown that the second epitaxial growth sequence or re-growth for realizing laser devices is a crucial processing step and that its optimization should take into consideration the doping level of Zn impurity
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; 1.55 micron; 1.8 to 300 K; III-V semiconductor; InGaAs-InGaAsP multiple quantum wells; MOCVD; as-grown structures; defect detection; interface quality; large-area topography; laser devices; optimization; peak intensity distributions; photoluminescence; re-growth; second epitaxial growth sequence; spectral analysis; Doping; Epitaxial growth; Monitoring; Photoluminescence; Quantum well devices; Spatial resolution; Spectral analysis; Surfaces; Wavelength measurement; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147302
