Buried grating distributed feedback laser at λ=1.51 μm

Author

Andrews, J.T. ; Vangieson, E.A. ; Enstrom, R.E. ; Appert, J.R. ; Kirk, J.B. ; Carlson, N.W.

Author_Institution

David Sarnoff Res. Center, Princeton, NJ, USA

fYear

1991

fDate

8-11 Apr 1991

Firstpage

106

Lastpage

109

Abstract

The growth of a distributed feedback (DFB) laser by two steps of organometallic chemical vapor deposition (OMCVD) epitaxy in which the feedback grating is a series of higher index of refraction InGaAsP segments (first growth) completely embedded in lower index InP (second growth) is reported. In the buried grating DFB (BG-DFB) laser, the coupling coefficient (Kl) of the laser optical mode to the feedback grating can be reproducibly and accurately adjusted by changing the thickness of the grating layer or the distance of the grating from the active region. The coupling coefficient can be adjusted over a large range without altering the waveguide parameters of the laser. The duty cycle (ratio of InGaAsP grating segment width to grating period) of the grating can be changed by adjusting the grating etch parameters. This provides another means to optimize the reflectivity and output coupling of second order gratings for grating surface emitter lasers

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.51 micron; III-V semiconductor; InGaAsP-InP lasers; OMCVD epitaxy; buried grating DFB laser; coupling coefficient; duty cycle; feedback grating; grating etch parameters; grating surface emitter lasers; laser optical mode; output coupling; reflectivity; second order gratings; Chemical lasers; Distributed feedback devices; Gratings; Laser feedback; Laser modes; Optical coupling; Optical feedback; Optical refraction; Surface emitting lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147304

Filename

147304