KMC silicon planar transistors

Double diffused silicon planar npn transistors capable of operating at frequencies as high as 2 Kmc are described. These transistors have an active emitter area of one square mil and a base width of approximately 0.5 micron. In spite of the small emitter area bonding of the lead wires to the transistor is accomplished readily through the use of relatively large metallized areas extending over the oxide protected surface. This method and others used in the fabrication of the transistors are described. With these transistors power gains as high as 14 db and an oscillator output power of 40 mw at 1 Kmc have been realized. The fT´s are typically about 800 mc. Curves showing performance vs. bias conditions and frequency are shown. A low storage time transistor for use in saturated switching and having the same active area is also discussed. Propagation delay times as low as 2 ns have been obtained.