Integrated high speed pin-diode grown by LP-MOVPE on selectively etched substrates

Author

Reemtsma, J.H. ; Kuebart, W. ; Koerner, U. ; Scherb, J. ; Eisele, H. ; Dütting, K. ; Gyuro, I. ; Wiedemann, P. ; Grotjahn, F. ; Kimmerle, J.

Author_Institution

SEL-Alcatel, Res. Centre, Stuttgart, Germany

fYear

1991

fDate

8-11 Apr 1991

Firstpage

114

Lastpage

117

Abstract

A concept for the integration of a p-i-n diode and a FET that allows for the selective optimization of both devices is presented. The fabrication process for an integrated p-i-n diode is described, and the results obtained with integrated devices are compared to standard p-i-n diodes. This process involves epitaxy for the high electron mobility transistor (HEMT) layers, selective etching of windows for the detector layers, epitaxy for the detector layers on an unmasked wafer, and selective etching of windows for the HEMT. All critical lithographic steps can then be performed on a planar wafer. A cross section of the integrated receiver is shown

Keywords

III-V semiconductors; etching; field effect integrated circuits; high electron mobility transistors; integrated optoelectronics; p-i-n diodes; photodiodes; semiconductor growth; sputter etching; vapour phase epitaxial growth; HEMT; III-V semiconductor; InP; LP-MOVPE; RIE; critical lithographic steps; detector layers; fabrication process; integrated high-speed p-i-n diode; integrated optoelectronics; integrated receiver; pin-HEMT receiver; planar wafer; selective etching; selective optimization; unmasked wafer; wet chemical etching; windows; Chemicals; Detectors; Dry etching; Epitaxial growth; HEMTs; Indium phosphide; Lattices; Substrates; Surface morphology; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147306

Filename

147306