• DocumentCode
    3551914
  • Title

    Semiconductor delay line tuner

  • Author

    Winslow, John S.

  • Author_Institution
    Electro-Optical Systems, Inc., Pasedena, California
  • Volume
    7
  • fYear
    1961
  • fDate
    1961
  • Firstpage
    32
  • Lastpage
    32
  • Abstract
    The drift of minority carriers in an electric field can be used to provide a voltage variable signal delay. In the semi-conductor delay line tuner, minority carriers are injected into a germanium bar subjected to an electric field. A series of equally spaced collectors, placed down stream from the point of injection, provide delayed versions of the injected signal with delays of \\Delta _{\\tau }, 2\\Delta _{\\tau }, 3\\Delta _{\\tau } , etc. When these signals are brought to a summing junction, the summer exhibits peak response for injected signals whose period is Δτ. For a sine wave, sine \\omega t , the output will be maximum when \\omega = frac{2\\pi}{\\Delta _{\\tau }} . Since the delay increment Δτis inversely proportional to the electric field, the frequency of maximum response may be varied by changing the voltage across the germanium bar.
  • Keywords
    Argon; Delay lines; Frequency; Germanium; Impedance; Performance analysis; Stability analysis; Temperature; Tuners; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1961 Internationa
  • Type

    conf

  • DOI
    10.1109/IEDM.1961.187225
  • Filename
    1473061