DocumentCode :
3551914
Title :
Semiconductor delay line tuner
Author :
Winslow, John S.
Author_Institution :
Electro-Optical Systems, Inc., Pasedena, California
Volume :
7
fYear :
1961
fDate :
1961
Firstpage :
32
Lastpage :
32
Abstract :
The drift of minority carriers in an electric field can be used to provide a voltage variable signal delay. In the semi-conductor delay line tuner, minority carriers are injected into a germanium bar subjected to an electric field. A series of equally spaced collectors, placed down stream from the point of injection, provide delayed versions of the injected signal with delays of \\Delta _{\\tau }, 2\\Delta _{\\tau }, 3\\Delta _{\\tau } , etc. When these signals are brought to a summing junction, the summer exhibits peak response for injected signals whose period is Δτ. For a sine wave, sine \\omega t , the output will be maximum when \\omega = frac{2\\pi}{\\Delta _{\\tau }} . Since the delay increment Δτis inversely proportional to the electric field, the frequency of maximum response may be varied by changing the voltage across the germanium bar.
Keywords :
Argon; Delay lines; Frequency; Germanium; Impedance; Performance analysis; Stability analysis; Temperature; Tuners; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1961 Internationa
Type :
conf
DOI :
10.1109/IEDM.1961.187225
Filename :
1473061
Link To Document :
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