Title :
Second-harmonic generation in biased GaAs/AlGaAs quantum well
Author :
Fiore, A. ; Rosencher, E. ; Berger, V. ; Nagle, J.
Author_Institution :
Lab. Central de Recherches, Thomson-CSF, Orsay, France
Abstract :
Summary form only given. Second-harmonic susceptibility of asymmetric or electrically biased GaAs/AlGaAs quantum wells (QWs) can be exploited to realize frequency-conversion devices in the near-infrared. The calculated /spl xi//sup (2/) values associated with interband transitions are in the range of 10-20 pm/V. In this paper we have measured the /spl xi//sup (2/) in biased symmetric QWs, where the QW nonlinearity can be electrically switched on and off, so that synchronous detection of second harmonic (SH) generated by the QWs alone can be performed.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; nonlinear optical susceptibility; optical harmonic generation; semiconductor quantum wells; GaAs-AlGaAs; biased symmetric quantum well; interband transition; near-infrared frequency-conversion device; nonlinearity; second order optical susceptibility; second-harmonic generation; synchronous detection; Electric variables measurement; Frequency; Gallium arsenide; Nonlinear optics; Optical filters; Polarization; Quantum mechanics; Signal generators; Substrates; Tensile stress;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
