A high speed low capacitance laser structure for integration

Author

Ash, R.M. ; Robbins, D.J. ; Charles, P. ; Jones, G.G. ; Fell, P.H. ; Wood, A.K. ; Carr, N.

Author_Institution

GEC Marconi Mater. Technol. Ltd.. Towcester, UK

fYear

1991

fDate

8-11 Apr 1991

Firstpage

122

Lastpage

125

Abstract

A laser structure for use at microwave frequencies that has reduced parasitic capacitance and resistance and is suitable for integration with other optoelectronic components is described. The fabrication of two devices is discussed: a 1.3-μm bulk device with a liquid-phase epitaxy (LPE)-grown active region and an all metalorganic vapor phase epitaxy (MOVPE) 1.55-μm multiple-quantum-well distributed feedback (DFB) laser. The devices were bonded active side up onto metal carriers for assessment with connections being made using short bond wires to a microstrip line terminated in a 50-Ω load and fed by a shape memory alloy (SMA) launcher. Measurements of light-current characteristics showed threshold currents of 15 mA for 250-μm-long uncoated lasers and external differential quantum efficiencies up to 25% facet at 25°C for the 1.3-μm devices. The results of large- and small-signal measurements of the lasers are presented

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; high-speed optical techniques; indium compounds; integrated optoelectronics; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; 1.3 micron; 1.55 micron; III-V semiconductor; InP-GaInAs devices; InP-GaInAsP devices; LP grown active region; MOVPE MQW DFB laser; differential quantum efficiencies; fabrication; high speed low capacitance laser structure; integration; large-signal measurements; light-current characteristics; microstrip line; microwave frequencies; optoelectronic components; reduced parasitic capacitance; reduced parasitic resistance; shape memory alloy launcher; short bond wires; small-signal measurements; threshold currents; Bonding; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Laser feedback; Masers; Microwave frequencies; Optical device fabrication; Parasitic capacitance; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147308

Filename

147308