DocumentCode :
3551937
Title :
The significance of crystallographic polarity in the fabrication of alloyed junctions in InSb
Author :
Minamoto, M.T. ; Minamoto, Miriam T.
Author_Institution :
Airborne Instruments Laboratory
Volume :
7
fYear :
1961
fDate :
1961
Firstpage :
68
Lastpage :
68
Abstract :
Electrical properties of alloyed junctions in InSb have been observed to depend significantly on crystallographic polarity. Junctions prepared by alloying to the face terminating in In atoms have consistently exhibited unusually low breakdown voltages not exceeding 
volts. All high breakdown (10-16 volts) junctions were those prepared by alloying to the reverse (Sb) face. Reverse current also appears markedly higher in junctions prepared using the In surface. These observations correspond reasonably with Gatos, Moody and Lavine\´s report on InSb crystal growth indicating the dependence of single and dislocation free crystal growth on
volts. All high breakdown (10-16 volts) junctions were those prepared by alloying to the reverse (Sb) face. Reverse current also appears markedly higher in junctions prepared using the In surface. These observations correspond reasonably with Gatos, Moody and Lavine\´s report on InSb crystal growth indicating the dependence of single and dislocation free crystal growth onKeywords :
Alloying; Breakdown voltage; Crystallography; Diodes; Fabrication; Gallium arsenide; Instruments; Laboratories; Low voltage; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1961 Internationa
Type :
conf
DOI :
10.1109/IEDM.1961.187246
Filename :
1473082
Link To Document :
