DocumentCode
3551937
Title
The significance of crystallographic polarity in the fabrication of alloyed junctions in InSb
Author
Minamoto, M.T. ; Minamoto, Miriam T.
Author_Institution
Airborne Instruments Laboratory
Volume
7
fYear
1961
fDate
1961
Firstpage
68
Lastpage
68
Abstract
Electrical properties of alloyed junctions in InSb have been observed to depend significantly on crystallographic polarity. Junctions prepared by alloying to the face terminating in In atoms have consistently exhibited unusually low breakdown voltages not exceeding 
volts. All high breakdown (10-16 volts) junctions were those prepared by alloying to the reverse (Sb) face. Reverse current also appears markedly higher in junctions prepared using the In surface. These observations correspond reasonably with Gatos, Moody and Lavine\´s report on InSb crystal growth indicating the dependence of single and dislocation free crystal growth on
volts. All high breakdown (10-16 volts) junctions were those prepared by alloying to the reverse (Sb) face. Reverse current also appears markedly higher in junctions prepared using the In surface. These observations correspond reasonably with Gatos, Moody and Lavine\´s report on InSb crystal growth indicating the dependence of single and dislocation free crystal growth onKeywords
Alloying; Breakdown voltage; Crystallography; Diodes; Fabrication; Gallium arsenide; Instruments; Laboratories; Low voltage; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1961 Internationa
Type
conf
DOI
10.1109/IEDM.1961.187246
Filename
1473082
Link To Document