Title :
New fabrication method for high frequency InP/InGaAsP buried heterostructure semiconductor lasers
Author :
Holmstrom, R.P. ; Meland, E. ; Schlafer, J. ; Powazinik, W.
Author_Institution :
GTE Lab. Inc., Waltham, MA, USA
Abstract :
A process that permits the controllable fabrication of buried heterostructure (BH) lasers with <1.0 μm wide active layers and 0.1-0.2 μm of lateral cladding and achieves the high photon densities and low parasitics necessary for high resonance frequency and modulation bandwidth lasers is described. The process may be used with bulk heterostructure, quantum well, and distributed feedback (DFB) grated structures. Control of critical dimensions to ±0.1 μm can be realized using the process. The process development for fabrication of a 1.3 μm or 1.5 μm wavelength high frequency laser is discussed
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; photolithography; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; sputter etching; vapour phase epitaxial growth; 1.3 micron; 1.5 micron; DFB grated structures; III-V semiconductors; InP-InGaAsP lasers; RIE; VPE; bulk heterostructure lasers; buried heterostructure semiconductor lasers; controllable fabrication; critical dimensions; fine line lithography; high frequency; high modulation bandwidth; quantum well lasers; selective etching; Distributed feedback devices; Frequency modulation; Indium phosphide; Laser feedback; Optical control; Optical device fabrication; Optical modulation; Quantum well lasers; Resonance; Resonant frequency;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147310
