Relaxation mechanism of Yb 4f-shell in InP

Author

Taguchi, Akihito ; Nakagome, Hiroshi ; Takahei, Kenichiro

Author_Institution

NTT Basic Res. Lab., Tokyo, Japan

fYear

1991

fDate

8-11 Apr 1991

Firstpage

134

Lastpage

137

Abstract

Comparison of the temperature dependencies of the intra-4f-shell photoluminescence (PL) and free electron concentration in Yb-doped InP reveals that two mechanisms dominate the thermal quenching of this PL. One is the localized Auger effect, which is effective in samples with an excess donor concentration. The other mechanism is independent of n- and p-type impurities and has an activation energy of about 150 meV. Investigation of the relationship between the temperature dependencies of the band-edge related PL and the 4f-shell PL indicates that this is due to the energy back transfer from the Yb 4f-shell to the host electronic state

Keywords

III-V semiconductors; carrier density; electron traps; impurity electron states; indium compounds; luminescence of inorganic solids; photoluminescence; radiation quenching; ytterbium; III-V semiconductor; InP:Yb; activation energy; energy back transfer; free electron concentration; intra-4f-shell photoluminescence; localized Auger effect; relaxation mechanism; temperature dependencies; thermal quenching; Electron traps; Hall effect; Indium phosphide; Laboratories; Luminescence; Optical devices; Spectroscopy; Temperature dependence; Temperature measurement; Thermal quenching;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147311

Filename

147311