Title :
Electrical characterization of lattice-mismatched InxGa 1-xAs photodiode arrays for detection to 1.7 μm
Author :
Ducroquet, F. ; Pogany, D. ; Ababou, S. ; Guillot, G. ; Krawczyk, S.K. ; Schohe, K. ; Klingelhöfer, C.
Author_Institution :
Lab. de Phys. de la Matiere, Villeurbanne, France
Abstract :
Lattice mismatched InxGa1-xAs photodiode arrays used for the detection of up to 1.7 μm in space applications are discussed. The abnormally high reverse current observed on some diodes is interpreted by the electric field assisted generation process. The role of misfit dislocations in the process seems to be important, as established by the correlation between local lowering of photoluminescence signal and the high reverse current. The detection of one deep level on these photodiodes by admittance spectroscopy measurements is described
Keywords :
III-V semiconductors; deep level transient spectroscopy; dislocation density; electron traps; gallium arsenide; indium compounds; infrared detectors; luminescence of inorganic solids; photodetectors; photodiodes; photoluminescence; 1.7 micron; III-V semiconductors; InxGa1-xAs photodiode arrays; InP-InxGa1-xAs-InP; admittance spectroscopy; dark current; deep level; electric field assisted generation process; electrical characterisation; electron traps; high reverse current; lattice-mismatched; local lowering; misfit dislocations; photoluminescence signal; space applications; Admittance; Dark current; Diodes; Indium gallium arsenide; Indium phosphide; Lattices; Photodiodes; Photoluminescence; Substrates; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147314
