Title :
DLTS study of proton and electron irradiated n+p InP MOCVD mesa diodes [solar cells]
Author :
Walters, Robert J. ; Messenger, Scott R. ; Summers, Geoffrey P.
Author_Institution :
SFA Inc., Landover, MD, USA
Abstract :
A study of proton irradiated InP junctions is described. Results are presented that show that the deep level transient spectroscopy (DLTS) spectra produced by 1 MeV electrons and 3 MeV protons in InP mesa diodes made using metalorganic chemical vapor deposition (MOCVD) are essentially the same. The results also show that there are some differences in the annealing behavior of the defects, especially following minority carrier injection at low temperatures
Keywords :
III-V semiconductors; annealing; deep level transient spectroscopy; electron beam effects; electron traps; hole traps; indium compounds; minority carriers; proton effects; solar cells; 1 MeV; 3 MeV; DLTS study; III-V semiconductor; InP junctions; MOCVD mesa diodes; annealing behavior; defects; electron irradiated; electron traps; hole traps; minority carrier injection; n+p diodes; proton irradiated; solar cells; Annealing; Diodes; Electron accelerators; Indium phosphide; MOCVD; Photovoltaic cells; Physics; Proton accelerators; Radiation monitoring; Spectroscopy;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147318
