• DocumentCode
    3551973
  • Title

    DLTS study of proton and electron irradiated n+p InP MOCVD mesa diodes [solar cells]

  • Author

    Walters, Robert J. ; Messenger, Scott R. ; Summers, Geoffrey P.

  • Author_Institution
    SFA Inc., Landover, MD, USA
  • fYear
    1991
  • fDate
    8-11 Apr 1991
  • Firstpage
    159
  • Lastpage
    163
  • Abstract
    A study of proton irradiated InP junctions is described. Results are presented that show that the deep level transient spectroscopy (DLTS) spectra produced by 1 MeV electrons and 3 MeV protons in InP mesa diodes made using metalorganic chemical vapor deposition (MOCVD) are essentially the same. The results also show that there are some differences in the annealing behavior of the defects, especially following minority carrier injection at low temperatures
  • Keywords
    III-V semiconductors; annealing; deep level transient spectroscopy; electron beam effects; electron traps; hole traps; indium compounds; minority carriers; proton effects; solar cells; 1 MeV; 3 MeV; DLTS study; III-V semiconductor; InP junctions; MOCVD mesa diodes; annealing behavior; defects; electron irradiated; electron traps; hole traps; minority carrier injection; n+p diodes; proton irradiated; solar cells; Annealing; Diodes; Electron accelerators; Indium phosphide; MOCVD; Photovoltaic cells; Physics; Proton accelerators; Radiation monitoring; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1991., Third International Conference.
  • Conference_Location
    Cardiff
  • Print_ISBN
    0-87942-626-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1991.147318
  • Filename
    147318
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3551973