Title :
Surface etching for light trapping in encapsulated InP solar cells
Author :
Jenkins, Phillip ; Landis, Geoffrey A.
Author_Institution :
Space Photovoltaic Res. Center. Cleveland State Univ., OH, USA
Abstract :
A technique for reducing the reflectance of glass-encapsulated InP, which is important for increasing the efficiency of solar cells and photodetectors, is described. The technique produces low-angle grooves on the surface by a maskless anisotropic etch. Light reflected from the low angle grooves is trapped by total internal reflection at the glass/air interface and directed back to the InP surface. Measurements indicating a significant decrease in surface reflection are presented
Keywords :
III-V semiconductors; encapsulation; etching; indium compounds; reflectivity; solar cells; III-V semiconductor; InP solar cells; InP surface; V-grooves; efficiency; glass-encapsulated; glass/air interface; light trapping; low-angle grooves; maskless anisotropic etch; reflectance; surface etching; total internal reflection; Etching; Indium phosphide; Optical reflection; Photodetectors; Photovoltaic cells; Photovoltaic systems; Production; Reflectivity; Solar power generation; Space technology;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147319
