Title :
High power and high temperature operation of 1.5 μm wavelength strained-layer InGaAs/InGaAsP SIPBH lasers
Author :
Thijs, P.J.A. ; Binsma, J.J.M. ; Young, E.W.A. ; van Gils, W.M.E.
Author_Institution :
Philips Optoelectron. Centre, Eindhoven, Netherlands
Abstract :
It is demonstrated that high performance lasers can be obtained not only with compressively strained quantum wells (QWs) but also with tensile strained QWs. In addition to low threshold current (density) and high power operation, the tensile strained multiple quantum well semi-insulating planar buried heterostructure (MQW SIPBH) lasers show excellent high temperature operation (up to 140°C). Compressively strained MQW SIPBH lasers are found to operate CW at record low threshold current values (0.8 mA) and record high output power (325 mW). It is concluded that both the band structure modifications induced by the strain and the quantum confinement. as well as the effective current confinement by means of semi-insulating InP, result in very high performance strained-layer MQW-SIPBH lasers
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; gradient index optics; indium compounds; semiconductor junction lasers; 1.5 micron; 140 C; 325 mW; III-V semiconductors; InGaAs-InGaAsP-InP lasers; InP substrate; band structure modifications; compressively strained; effective current confinement; high power operation; high temperature operation; low threshold current; quantum confinement; semi-insulating planar buried heterostructure; step graded index separate confinement heterostructure; strained-layer MQW-SIPBH lasers; tensile strained; very high performance; Capacitive sensors; Indium gallium arsenide; Indium phosphide; Laser transitions; Laser tuning; Power lasers; Quantum well devices; Quantum well lasers; Temperature; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147332
