Title :
Stray capacitance in thin film circuits
Author_Institution :
Lockheed Missiles & Space Company, Sunnyvale, California
Abstract :
The interelectrode capacitance in film-type circuits becomes a critical design limitation as dimensions decrease and as substrates of high dielectric constants are developed. Design charts and engineering approximations are presented and illustrated by evaluating the effect of stray capacitance on a completed film-type IF amplifier circuit.
Keywords :
Capacitance; Design engineering; Dielectric substrates; Diffusion processes; Frequency; High-K gate dielectrics; Missiles; Oscillators; Resonance; Thin film circuits;
Conference_Titel :
Electron Devices Meeting, 1962 International
DOI :
10.1109/IEDM.1962.187300
