Laser properties of 1.35 μm InGaAs/InGaAsP-separate-confinement-multi-quantum-well-structures

Author

Möhrle, M. ; Grützmacher, D. ; Rosenzweig, M. ; Düser, H.

Author_Institution

Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany

fYear

1991

fDate

8-11 Apr 1991

Firstpage

188

Lastpage

191

Abstract

Measurements of the threshold current densities of 1.35 μm InGaAs/InGaAsP MQW separate-confinement laser structures are presented. It is shown that the lowest values for the threshold current density can be obtained with barrier thicknesses between 10 and 15 nm. The extrapolated threshold current densities of the investigated structures varied between 780 and 1120 A-cm^-2. depending on the number of wells. The characteristic temperature T₀ of the laser structures was about 60 K

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; 1.35 micron; 60 K; III-V semiconductors; InGaAs-InGaAsP-InP structures; InP substrates; characteristic temperature; laser properties; laser structures; ridge-waveguide lasers; separate-confinement-multi-quantum-well-structures; threshold current densities; Current density; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Light sources; Optical saturation; Quantum well devices; Quantum well lasers; Threshold current; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147333

Filename

147333