Title :
Laser properties of 1.35 μm InGaAs/InGaAsP-separate-confinement-multi-quantum-well-structures
Author :
Möhrle, M. ; Grützmacher, D. ; Rosenzweig, M. ; Düser, H.
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
Abstract :
Measurements of the threshold current densities of 1.35 μm InGaAs/InGaAsP MQW separate-confinement laser structures are presented. It is shown that the lowest values for the threshold current density can be obtained with barrier thicknesses between 10 and 15 nm. The extrapolated threshold current densities of the investigated structures varied between 780 and 1120 A-cm-2. depending on the number of wells. The characteristic temperature T0 of the laser structures was about 60 K
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; 1.35 micron; 60 K; III-V semiconductors; InGaAs-InGaAsP-InP structures; InP substrates; characteristic temperature; laser properties; laser structures; ridge-waveguide lasers; separate-confinement-multi-quantum-well-structures; threshold current densities; Current density; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Light sources; Optical saturation; Quantum well devices; Quantum well lasers; Threshold current; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147333
