DocumentCode :
3552040
Title :
Tunneling current density as a function of crystallographic polarity
Author :
Minamoto, M.T. ; Malafi, H.T. ; Minamoto, M.T. ; Malafi, H.T.
Author_Institution :
Airborne Instruments Laboratory, Melville, L.I., New York
Volume :
8
fYear :
1962
fDate :
1962
Firstpage :
76
Lastpage :
76
Abstract :
Previous work in this laboratory showed reverse characteristics of alloyed diodes prepared from a III-V compound can be profoundly dependent upon the polarity of the
Keywords :
Alloying; Breakdown voltage; Crystallography; Current density; Electric breakdown; III-V semiconductor materials; Instruments; Laboratories; Light emitting diodes; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1962 International
Type :
conf
DOI :
10.1109/IEDM.1962.187328
Filename :
1473355
Link To Document :
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