High efficiency injection electroluminescence in GaAs

Certain zinc diffused diodes when biased in the forward direction emit intense line radiation just below the band gap energy. The spectral distribution, efficiency of radiative recombination, and current-voltage characteristics have been measured at 300° K, 77° K, and 4.2° K. The emission intensity of the various spectral lines has been determined as a function of diode current. The ease of modulation, applications and the mechanism responsible for the injection luminescence will be discussed.