Title :
InGaAsP diode lasers with high intrinsic bandwidth
Author :
Schlafer, J. ; Meland, E. ; Lauer, R.B. ; Holmstrom, R. ; LaCourse, J. ; Su, C.B.
Author_Institution :
GTE Lab. Inc., Waltham, MA, USA
Abstract :
The intrinsic frequency response and the maximum modulation bandwidths of lasers with extremely large intrinsic resonance frequencies and thus with very high 3 dB modulation bandwidth potential are discussed. It is shown that in the absence of electrical parasitics. the modulation bandwidths approach 50 GHz and that the lasers, characterized by a large differential gain, are capable of achieving very high bandwidths at relatively low operating powers
Keywords :
III-V semiconductors; frequency response; gallium arsenide; indium compounds; optical modulation; semiconductor junction lasers; 50 GHz; III-V semiconductor; InGaAsP diode lasers; high intrinsic bandwidth; intrinsic frequency response; large differential gain; maximum modulation bandwidths; relatively low operating powers; Bandwidth; Damping; Diode lasers; Fiber lasers; Laser noise; Optical fibers; Power generation; Power lasers; Resonance; Resonant frequency;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147337
