Title :
The growth of MQW planar buried heterostructure lasers with semi-insulating blocking layers by OMVPE
Author :
Jowett, J.M. ; Moule, D.J. ; Wright, A.P. ; Briggs, A.T.R.
Author_Institution :
STC Technol. Ltd., Harlow, UK
Abstract :
The growth of suitable semi-insulating (SI) material for buried heterostructure (BH) lasers and the material´s electrical characteristics under single and double carrier injection conditions are described. The difficulty of regrowth of InP around mesas is discussed. It is necessary to grow a thick SI layer for maximum resistance, and to achieve a planar surface to enable electrical contact to be made to the device. Threshold currents as low as 7 mA, output powers of over 20 mW and modulation bandwidths up to 8 GHz have been measured for a laser with highly resistive planar SI layers
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 20 mW; 7 mA; 8 GHz; GaInAs-InP:Fe; III-V semiconductor; InP:Fe; MQW planar buried heterostructure lasers; OMVPE; double carrier injection; modulation bandwidths; output powers; planar surface; semi-insulating blocking layers; single carrier injection; threshold currents; Bandwidth; Contact resistance; Electric resistance; Electric variables; Indium phosphide; Optical materials; Power generation; Quantum well devices; Surface resistance; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147338
