Title :
MBE growth of very high electron mobility InAlAs/InGaAs/InP heterostructure
Author :
Tacano, Munecazu ; Sugiyama, Yoshinobu ; Takeuchi, Yoshio ; Ueno, Yoshiki
Author_Institution :
Electrotech. Lab., Ibaraki, Japan
Abstract :
The growth of a very high electron mobility pseudomorphic In0.8Ga0.2As heterostructure on InP using an overshoot-free control of flux densities and precise control of the flux ratio through a calibration technique of reflection high energy electron diffraction (RHEED) oscillations in a molecular beam epitaxial (MBE) system is described. The critical layer thickness for the pseudomorphic growth of InGaAs on InP is found to follow the energy balance model, and a very high two-dimensional electron gas mobility of over 1.5 m2 /Vs and over 15 m2/Vs at 293 K and 10 K, respectively, is obtained
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; semiconductor superlattices; 10 K; 293 K; HEMT; III-V semiconductor; InAlAs-InGaAs-InP heterostructure; MBE growth; RHEED oscillations; calibration technique; critical layer thickness; energy balance model; flux densities; flux ratio; overshoot-free control; precise control; pseudomorphic; two-dimensional electron gas mobility; very high electron mobility; Calibration; Control systems; Diffraction; Electron beams; Electron mobility; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical reflection;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147340
