High speed InGaAs HBT devices and circuits

Author

Jalali, B. ; Nottenburg, R.N. ; Banu, M. ; Montgomery, R.K. ; Levi, A.F.J. ; Panish, M.B. ; Cho, A.Y.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

fYear

1991

fDate

8-11 Apr 1991

Firstpage

228

Lastpage

233

Abstract

An overview of the InGaAs heterostructure bipolar transistor (HBT) technology for applications in high speed electronics is presented. Properties of both Al_0.48In_0.52As-In_0.53Ga_0.47As and InP-In_0.53Ga_0.47As heterostructure systems, important for integrated circuit applications are discussed. Examples of high speed and low power integrated circuits that are relevant for lightwave communication technology are described

Keywords

III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; optical communication equipment; Al_0.48In_0.52As-In_0.53Ga_0.47As; InGaAs HBT devices; InP-In_0.53Ga_0.47As; heterostructure bipolar transistor; heterostructure systems; high speed electronics; high-speed circuits; integrated circuit applications; lightwave communication technology; low power integrated circuits; Doping; Gallium arsenide; Heterojunction bipolar transistors; High-speed electronics; Indium gallium arsenide; Indium phosphide; Integrated circuit technology; Photonic band gap; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147343

Filename

147343