Title :
High speed InGaAs HBT devices and circuits
Author :
Jalali, B. ; Nottenburg, R.N. ; Banu, M. ; Montgomery, R.K. ; Levi, A.F.J. ; Panish, M.B. ; Cho, A.Y.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
An overview of the InGaAs heterostructure bipolar transistor (HBT) technology for applications in high speed electronics is presented. Properties of both Al0.48In0.52As-In0.53Ga0.47 As and InP-In0.53Ga0.47As heterostructure systems, important for integrated circuit applications are discussed. Examples of high speed and low power integrated circuits that are relevant for lightwave communication technology are described
Keywords :
III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; optical communication equipment; Al0.48In0.52As-In0.53Ga0.47 As; InGaAs HBT devices; InP-In0.53Ga0.47As; heterostructure bipolar transistor; heterostructure systems; high speed electronics; high-speed circuits; integrated circuit applications; lightwave communication technology; low power integrated circuits; Doping; Gallium arsenide; Heterojunction bipolar transistors; High-speed electronics; Indium gallium arsenide; Indium phosphide; Integrated circuit technology; Photonic band gap; Silicon; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147343
