Title :
InGaAs/InP double-heterojunction bipolar transistors with graded-InGaAsP between InGaAs base and InP collector grown by metal organic chemical vapor deposition
Author :
Ohkubo, M. ; Iketani, A. ; Ijichi, T. ; Kikuta, T.
Author_Institution :
Furukawa Electr.-Co. Ltd., Yokohama, Japan
Abstract :
The fabrication of InGaAs/InP double-heterojunction bipolar transistors (D-HBTs) grown by metal organic chemical vapor deposition (MOCVD) is described. With graded-InGaAsP layers inserted between the p + InGaAs base and n- InP collector, the current gain of D-HBTs with graded layers was found to be about twice as large as that of D-HBTs without graded layers, and the dependence of collector current on collector/emitter voltage was smaller than without graded layers. The current gain was measured up to 2300 with 25×25 μm 2 emitter area at a collector current density of 1×10 4 A/cm2
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor growth; vapour phase epitaxial growth; D-HBTs; HBT; InGaAs-InP; MOCVD; chemical vapor deposition; collector current; collector/emitter voltage; current gain; double-heterojunction bipolar transistors; fabrication; graded-InGaAsP layers; metal organic CVD; n- InP collector; p+ InGaAs base; Area measurement; Bipolar transistors; Chemical vapor deposition; Density measurement; Fabrication; Indium gallium arsenide; Indium phosphide; MOCVD; Organic chemicals; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147344
