Title :
P- and n-channel InAlAs/InGaAs heterojunction insulated gate FETs (HIGFETs) on InP
Author :
Swirhun, S. ; Nohava, T. ; Huber, J. ; Bounnak, S. ; Joslyn, P.
Author_Institution :
Honeywell Syst. & Res. Center, Bloomington, MN, USA
Abstract :
The simultaneous fabrication of enhancement-mode p-channel and n-channel heterojunction insulated gate FETs (HIGFETs) using InAlAs/InGaAs/InAlAs heterostructure layers on InP substrates is discussed. Near 1-μm gate length, e-mode p-channel HIGFETs are shown to have a threshold voltage near -0.66 V, sharp pinchoff, 0.9-V gate diode turn-on, and a room-temperature extrinsic transconductance >20 mS/mm. The adjacent (complementary) n-channel HIGFETs are shown to exhibit e-mode operation (threshold Vtn=0.16 V), low leakage, 0.9-V gate diode turn-on, and high transconductance (g m>320 mS/mm)
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; 1 micron; 20 mS; 320 mS; HIGFETs; InAlAs-InGaAs-InAlAs-InP; InP substrates; enhancement-mode; heterojunction insulated gate FETs; n-channel; p-channel; simultaneous fabrication; transconductance; Diodes; FETs; Fabrication; Heterojunctions; Indium compounds; Indium gallium arsenide; Indium phosphide; Insulation; Threshold voltage; Transconductance;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147345
