P- and n-channel InAlAs/InGaAs heterojunction insulated gate FETs (HIGFETs) on InP

Author

Swirhun, S. ; Nohava, T. ; Huber, J. ; Bounnak, S. ; Joslyn, P.

Author_Institution

Honeywell Syst. & Res. Center, Bloomington, MN, USA

fYear

1991

fDate

8-11 Apr 1991

Firstpage

238

Lastpage

241

Abstract

The simultaneous fabrication of enhancement-mode p-channel and n-channel heterojunction insulated gate FETs (HIGFETs) using InAlAs/InGaAs/InAlAs heterostructure layers on InP substrates is discussed. Near 1-μm gate length, e-mode p-channel HIGFETs are shown to have a threshold voltage near -0.66 V, sharp pinchoff, 0.9-V gate diode turn-on, and a room-temperature extrinsic transconductance >20 mS/mm. The adjacent (complementary) n-channel HIGFETs are shown to exhibit e-mode operation (threshold V_tn=0.16 V), low leakage, 0.9-V gate diode turn-on, and high transconductance (g _m>320 mS/mm)

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; 1 micron; 20 mS; 320 mS; HIGFETs; InAlAs-InGaAs-InAlAs-InP; InP substrates; enhancement-mode; heterojunction insulated gate FETs; n-channel; p-channel; simultaneous fabrication; transconductance; Diodes; FETs; Fabrication; Heterojunctions; Indium compounds; Indium gallium arsenide; Indium phosphide; Insulation; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147345

Filename

147345