DocumentCode
355207
Title
Lateral, wet thermal oxidation of AlAsSb lattice-matched to InP
Author
Blum, Oliver ; Geib, K. ; Hafich, M.J. ; Klem, John F. ; Lear, K.L. ; Ashby, C.I.H.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
fYear
1996
fDate
2-7 June 1996
Firstpage
472
Lastpage
473
Abstract
Summary form only given. We present for the first time, to our knowledge, results of lateral, wet thermal oxidation of AlAsSb lattice-matched to InP. Using Auger analysis, SEM characterization, and Raman scattering, we find that the AlAsSb layer is converted to Al/sub 2/O/sub 3/ and an interfacial layer of semi-metallic Sb is formed between the top interface of the oxide and the cap material. Device implications of these findings, particularly of the Sb separation, are discussed.
Keywords
Auger effect; III-V semiconductors; Raman spectra; aluminium compounds; indium compounds; oxidation; scanning electron microscopy; Al/sub 2/O/sub 3/; AlAsSb-InP; Auger analysis; Raman scattering; SEM; interfacial layer; lateral wet thermal oxidation; lattice-matched layer; semi-metallic Sb; Argon; Gallium nitride; Indium phosphide; Luminescence; Optical materials; Optimized production technology; Oxidation; Resonance; Semiconductor materials; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location
Anaheim, CA, USA
Print_ISBN
1-55752-443-2
Type
conf
Filename
864944
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