Title :
Lateral, wet thermal oxidation of AlAsSb lattice-matched to InP
Author :
Blum, Oliver ; Geib, K. ; Hafich, M.J. ; Klem, John F. ; Lear, K.L. ; Ashby, C.I.H.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
Summary form only given. We present for the first time, to our knowledge, results of lateral, wet thermal oxidation of AlAsSb lattice-matched to InP. Using Auger analysis, SEM characterization, and Raman scattering, we find that the AlAsSb layer is converted to Al/sub 2/O/sub 3/ and an interfacial layer of semi-metallic Sb is formed between the top interface of the oxide and the cap material. Device implications of these findings, particularly of the Sb separation, are discussed.
Keywords :
Auger effect; III-V semiconductors; Raman spectra; aluminium compounds; indium compounds; oxidation; scanning electron microscopy; Al/sub 2/O/sub 3/; AlAsSb-InP; Auger analysis; Raman scattering; SEM; interfacial layer; lateral wet thermal oxidation; lattice-matched layer; semi-metallic Sb; Argon; Gallium nitride; Indium phosphide; Luminescence; Optical materials; Optimized production technology; Oxidation; Resonance; Semiconductor materials; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
