Title :
Recent advances in dry etching processes for InP-based materials
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
Abstract :
The advances towards high-quality dry etching techniques for InP-based materials are reviewed, including recent results on process induced damage. Methods of in situ etch depth control are discussed, and examples of devices advantageously fabricated by dry etching techniques are presented
Keywords :
III-V semiconductors; indium compounds; semiconductor technology; sputter etching; InGaAsP; InP; InP-based materials; dry etching processes; in situ etch depth control; process induced damage; semiconductors; Dry etching; Gases; Indium phosphide; Ion beams; Plasma applications; Plasma chemistry; Plasma materials processing; Semiconductor materials; Sputter etching; Surface morphology;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147346
