Reactively ion etched nonuniform-depth grating for advanced DFB lasers

Author

Matsuda, Manabu ; Kotaki, Yuji ; Ishikawa, Hiroshi ; Wada, Osamu

Author_Institution

Fujitsu Lab. Ltd., Kanagawa, Japan

fYear

1991

fDate

8-11 Apr 1991

Firstpage

256

Lastpage

259

Abstract

An ethane (C₂H₂) reactive ion etching (RIE) technique that offers smooth-etched morphology, high controllability of depth, and anisotropic geometries for forming a nonuniform-depth grating on an InP substrate is discussed. The fabrication of a λ/4-shifted multiple quantum well (MQW) distributed feedback (DFB) laser with a 900 μm cavity and a nonuniform-depth grating is described. It is shown that the larger threshold gain difference predicted by theory is obtained despite strong hole-burning

Keywords

III-V semiconductors; diffraction gratings; distributed feedback lasers; indium compounds; integrated optics; optical workshop techniques; semiconductor junction lasers; sputter etching; λ/4-shifted; 900 micron; C₂H₂; DFB lasers; InP substrate; MQW; RIE; anisotropic geometries; distributed feedback; ethane; fabrication; hole-burning; multiple quantum well; nonuniform-depth grating; reactive ion etching; semiconductor lasers; smooth-etched morphology; Anisotropic magnetoresistance; Controllability; Distributed feedback devices; Etching; Geometrical optics; Gratings; Indium phosphide; Morphology; Optical device fabrication; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147347

Filename

147347