Title :
Self-consistent charge control modelling of InP based HFET structures
Author :
Morton, C.G. ; Carline, R.T. ; Allsopp, D.W.E.
Author_Institution :
Dept. of Electron., York Univ., UK
Abstract :
The results of a theoretical study of the charge control characteristics of different n-channel InP-based HFETs are presented. The calculations involve determining the variation of the two-dimensional electron gas (2DEG) density, ns, with gate bias, VG, from the self-consistent solution of the one-dimensional forms of Poisson´s equation and the single electron Schroedinger equation. The prospect of implementing enhancement mode and depletion mode FETs for direct-coupled FET logic (DCFL) by using SISFETs with pseudomorphic n+ contacts is demonstrated. For MODFETs the compromise between maximizing the transconductance (gm) or the gate voltage range giving peak gm is discussed, and performance improvements are reported for stepped well channel structures
Keywords :
III-V semiconductors; electron gas; high electron mobility transistors; indium compounds; semiconductor device models; 2D electron gas density; 2DEG; DCFL; HFET structures; InP; MODFETs; Poisson´s equation; SISFETs; charge control modelling; depletion mode; direct-coupled FET logic; enhancement mode; gate voltage range; n-channel; pseudomorphic n+ contacts; self-consistent solution; single electron Schroedinger equation; stepped well channel structures; transconductance; two-dimensional electron gas; Doping; Electron mobility; FETs; HEMTs; Indium phosphide; Intrusion detection; Logic devices; MODFETs; Photonic band gap; Velocity control;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147352
