DocumentCode
3552080
Title
InP Schottky diodes and MESFETs with enhanced barrier height using InPxOy films
Author
Kusumi, D. ; Ohkubo, Y. ; Ura, M. ; Ohmori, M.
Author_Institution
Nippon Min. Co. Ltd., Saitama, Japan
fYear
1991
fDate
8-11 Apr 1991
Firstpage
288
Lastpage
291
Abstract
An InPxOy film formed by P2O5 evaporation and annealing below 380°C was applied to enhance the Schottky barrier height for InP diodes and MESFETs. Optimizing the film formation, an InPxOy film of less than 10 nm in thickness has been obtained reproducibly. The film and the film/InP interface were evaluated by X-ray photoelectron spectroscopy (XPS) and Auger electron Spectroscopy (AES) analysis. The best Au (1 mmφ)/InPxOy/InP diode showed barrier height as high as 0.95 eV, an ideality factor of 1.2, and a reverse current of 100 pA at -10 V. Applying the structure of Au-InPxOy-InP to the MESFET, a transconductance of 106 mS/mm in the 0.8 μm gate length FET was demonstrated
Keywords
Auger effect; III-V semiconductors; Schottky gate field effect transistors; Schottky-barrier diodes; X-ray photoelectron spectra; indium compounds; 0.8 micron; 10 nm; 106 mS; 380 degC; AES; Au-InPxOy-InP; Auger electron Spectroscopy; InPxOy films; MESFETs; P2O5 evaporation; Schottky diodes; X-ray photoelectron spectroscopy; XPS; annealing; enhanced barrier height; film formation; Annealing; Electrons; FETs; Gold; Indium phosphide; MESFETs; Schottky barriers; Schottky diodes; Spectroscopy; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location
Cardiff
Print_ISBN
0-87942-626-8
Type
conf
DOI
10.1109/ICIPRM.1991.147355
Filename
147355
Link To Document