Carrier confinement and feed-back correlation in InAlAs/InGaAs HEMTs on InP substrate

Author

Kohn, Erhard ; Dickmann, Jürgen

Author_Institution

Dept. of Electron Devices & Circuits, Ulm Univ., Germany

fYear

1991

fDate

8-11 Apr 1991

Firstpage

296

Lastpage

299

Abstract

The RF behavior of InP-based HEMT structures was evaluated using a feedback correlation. No evidence was found that the deep quantum well InAlAs/InGaAs/InAlAs configuration adds to improved feedback behavior through additional confinement of hot carriers. The model does show that a drift region with a large aspect ratio can develop, which can be traversed by electrons with overshoot velocity leading to high f_max/f_T ratios at high f_T in the devices. It is concluded that in the design of millimeter-wave InP-based HEMTs, the structural aspect ratio and the aspect ratio of the drift region at the bias region of operation have to be optimized to take maximum advantage of a long drift region combined with a high transit overshoot velocity in the device

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; hot carriers; indium compounds; semiconductor device models; semiconductor quantum wells; solid-state microwave devices; InAlAs-InGaAs-InAlAs-InP; InP substrate; InP-based HEMT structures; RF behavior; bias region operation; deep quantum well; drift region; feedback behavior; feedback correlation; hot carrier confinement; millimeter-wave; structural aspect ratio; transit overshoot velocity; Carrier confinement; Electron mobility; Feeds; Gallium arsenide; HEMTs; Hot carriers; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147357

Filename

147357