Low-frequency gain dispersion, optical response, and 1/f noise in ion-implanted InP JFETs

Author

Kruppa, W. ; Boos, J.B. ; Carruthers, T.F.

Author_Institution

SFA Inc., Landover, MD, USA

fYear

1991

fDate

8-11 Apr 1991

Firstpage

300

Lastpage

303

Abstract

The effects of trapping mechanisms on the transconductance, output resistance, optical response, and low-frequency noise of an ion-implanted InP JFET are discussed. The results indicate a decrease in both the transconductance and output resistance occurring primarily between 100 Hz and 100 kHz. Optical response time constants and noise peaks corresponding to these frequencies were observed. The primary trapping mechanism responsible for the low-field transconductance dispersion appears to be a surface state with an activation energy of 0.28 eV

Keywords

III-V semiconductors; electron device noise; electron traps; hole traps; indium compounds; ion implantation; junction gate field effect transistors; random noise; 1/f noise; 100 Hz to 100 kHz; InP; LF characteristics; activation energy; gain dispersion; ion-implanted InP JFETs; low-frequency noise; optical response; output resistance; surface state; transconductance; trapping mechanisms; Dispersion; Electrical resistance measurement; Frequency; Indium phosphide; JFETs; Low-frequency noise; Optical noise; Resistors; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147358

Filename

147358