Title :
EC-V profiling of InP
Author :
Faur, M. ; Faur, M. ; Vargas, C. ; Goradia, M.
Author_Institution :
Cleveland State Univ., OH, USA
Abstract :
The electrochemical current-voltage profiling of p, n, p+ , and n+ liquid encapsulated Czochralski (LEC) or VGE grown InP substrates. thermally diffused n+p and p+n, and epitaxially grown n+p InP structures using an electrolyte called FAP is described. It found that the FAP electrolyte is inherently superior to previously reported electrolytes (0.5 M HCl and the Pear etch) for performing accurate EC-V profiling of InP at current densities of up to 0.3 mA/cm2
Keywords :
III-V semiconductors; carrier density; electrical conductivity of crystalline semiconductors and insulators; electrochemical analysis; indium compounds; p-n homojunctions; EC-V profiling; FAP electrolyte; I-V profiling; InP; LEC substrate; VGE grown; electrochemical current-voltage profiling; epitaxially grown n+p structures; liquid encapsulated Czochralski; majority carrier concentration; n-type; n+-type; p-type; p+-type; thermally diffused n+p structures; thermally diffused p+n structures; vertical gradient freeze; Capacitance-voltage characteristics; Current density; Etching; Financial advantage program; Indium phosphide; Inspection; Lighting; Scanning electron microscopy; Substrates; Surface topography;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147360
