EC-V profiling of InP

Author

Faur, M. ; Faur, M. ; Vargas, C. ; Goradia, M.

Author_Institution

Cleveland State Univ., OH, USA

fYear

1991

fDate

8-11 Apr 1991

Firstpage

310

Lastpage

314

Abstract

The electrochemical current-voltage profiling of p, n, p⁺, and n⁺ liquid encapsulated Czochralski (LEC) or VGE grown InP substrates. thermally diffused n⁺p and p⁺n, and epitaxially grown n⁺p InP structures using an electrolyte called FAP is described. It found that the FAP electrolyte is inherently superior to previously reported electrolytes (0.5 M HCl and the Pear etch) for performing accurate EC-V profiling of InP at current densities of up to 0.3 mA/cm²

Keywords

III-V semiconductors; carrier density; electrical conductivity of crystalline semiconductors and insulators; electrochemical analysis; indium compounds; p-n homojunctions; EC-V profiling; FAP electrolyte; I-V profiling; InP; LEC substrate; VGE grown; electrochemical current-voltage profiling; epitaxially grown n⁺p structures; liquid encapsulated Czochralski; majority carrier concentration; n-type; n⁺-type; p-type; p⁺-type; thermally diffused n⁺p structures; thermally diffused p⁺n structures; vertical gradient freeze; Capacitance-voltage characteristics; Current density; Etching; Financial advantage program; Indium phosphide; Inspection; Lighting; Scanning electron microscopy; Substrates; Surface topography;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147360

Filename

147360