Second breakdown: Effects of base drive and structural defects

Second breakdown in transistors, commonly recognized by an abrupt reduction in VCE, has associated with it a marked constriction in the current distribution. This constriction has been observed, by monitoring the current modulated base resistance in tetrode transistors and by observations of the current distribution (through the associated temperature distribution) with the aid of temperature sensitive phosphors. The results of using such phosphors in studying the behavior of current distributions in alloyed germanium transistors and diodes in conjunction with various electrical measurements will be reported.