Title :
Electrical and optical characterizations of Ga-doped or Sb-doped InP crystal
Author :
Liu, Xunlang ; Ye, Shizhong ; Yang, Baohua ; Jiao, Jinghua ; Zhao, Jianqun
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
Abstract :
Electrical and optical characterizations of Ga-doped and Sb-doped InP crystal are presented. It is shown that doping with isoelectronic impurities, such as Ga or Sb, does not affect the electrical properties of InP crystal, dilute solid solutions are formed by doping InP with isoelectronic impurities, and native defects in InP can be reduced by doping with Sb
Keywords :
III-V semiconductors; electrical conductivity of crystalline semiconductors and insulators; indium compounds; photoluminescence; semiconductor doping; InP:Ga; InP:Sb; PL spectra; dilute solid solutions; doping; electrical properties; isoelectronic impurities; native defects-reduction; optical characterizations; Atom optics; Atomic measurements; Crystals; Doping; Impurities; Indium phosphide; Microwave devices; Microwave theory and techniques; Optical scattering; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147361
