Title :
Cost effective manufacturing of high quality (100) InP round substrates
Author :
Shahid, M.A. ; Simchock, F.
Author_Institution :
AT&T Bell Lab., Princeton, NJ, USA
Abstract :
A cost-effective process for growing ⟨111⟩ InP single crystals to produce high quality round (100) InP substrates is described. The process of growing elliptical InP crystals uses approximately 40% less material for a given length of a crystal, compared with the process using a circular cross section. The etch pit density measured over the whole wafer is <50/cm2
Keywords :
III-V semiconductors; crystal growth from melt; indium compounds; semiconductor technology; substrates; ⟨111⟩ single crystals; (100) round substrates; cost-effective process; elliptical InP crystals; etch pit density; manufacturing; semiconductors; Costs; Indium phosphide; Manufacturing; Production; Shape;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147362
