DocumentCode
3552142
Title
Dynamic operation of the in-line cryotron in bistable circuits
Author
Brennemann, A.E. ; Seki, H. ; Seraphim, D.P.
Author_Institution
International Business Machines Corporation, Yorktown Heights, New York
Volume
9
fYear
1963
fDate
1963
Firstpage
76
Lastpage
76
Abstract
The dynamic operation of the in-line cryotron is tested by performing pulse measurements on individual devices and also by using the device in free running closed loop oscillators (similar to shift register). The gain of the device is currently insufficient to permit bit transfer from one stage of the oscillator to the next in less than 25 nanoseconds. This propagation time is slow when compared to the 10 nanosecond circuit time constant L/R that was designed for each stage. The slower propagation is shown to be associated with the slow transition of resistance from the superconducting to the normal state and also from the normal to the superconducting state. Pulse measurements on the device indicate that the cryotron switching time is dependent upon the magnitude of the applied magnetic field. The times for switching resistance obtained from the pulse measurements are applied to the analysis of the dynamically operating closed loop register. The maximum oscillating frequency of 5 mc for a four stage closed register was predicted by the analysis and is shown to be in good agreement with the experiment. A similar analysis, using the same cryotron limitations, show the maximum frequency for a two stage closed ring register to be essentially the same as that for a four stage register. Again, this was verified experimentally. Thermal considerations, state-of-the-art fabrication, and testing procedures are discussed along with projected cryotron improvements that could lead to flip-flop time constants of about 10 nanoseconds.
Keywords
Bistable circuits; Circuit testing; Frequency; Magnetic analysis; Magnetic switching; Nanoscale devices; Oscillators; Performance evaluation; Pulse measurements; Shift registers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1963 International
Type
conf
DOI
10.1109/IEDM.1963.187400
Filename
1473625
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