Title :
Influence of lattice parameter variations across n-InP-substrates on a complex of material properties of InP/InGaAsP-DHS
Author :
Knauer, A. ; Staske, R. ; Kräusslich, J. ; Kittner, R.
Author_Institution :
Zentralinst. fur Opt. und Spektroskopie, Berlin, Germany
Abstract :
Precision lattice parameter and photoluminescence measurements of InP substrates and InP/InGaAsP double heterostructures (DHSs) are presented. The measurements show a lattice dilatation in a region with enriched free carrier concentration achieved by using strong n-type doped InP substrates of ⟨111⟩ grown liquid encapsulated Czochralski (LEC) crystals. Strain gradients and mismatch problems are taken into consideration
Keywords :
III-V semiconductors; doping profiles; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor junctions; InP substrates; InP-InGaAsP; doping concentration; double heterostructures; lattice dilatation; lattice mismatch; lattice parameter measurement; lattice parameter variations; material properties; mismatch problems; photoluminescence measurements; semiconductors; strain gradients; Capacitive sensors; Crystals; Impurities; Indium phosphide; Lattices; Material properties; Semiconductor device doping; Strain measurement; Substrates; Tin;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147364
